| 摘要 |
<p>Semiconductor device. The thermal behaviour of a semiconductor body (2) is considerably improved by giving parts of high and equal dissipation (3, 31, 32, 33, 34) the same surface area and situating these regions so that the edge (5, 6) of the semiconductor body (2) constitutes a mirror surface for a row of such regions (3). These regions may comprise subtransistors (31, 32, 33, 34) of power transistors or a Darlington circuit. In the latter case, a further improvement is possible by thermal cross-coupling. The additional space at the edge (5, 6) which is required to apply the reflection principle can be used for nondissipating elements.</p> |
