| 摘要 |
PURPOSE:To isolate a dielectric between elements by forming an SiO2 layer, a P type region and a high-concentration N type region at an insular end section and a low concentration region at a center on a semiconductor layer on a substrate and connecting the surfaces of these layer and regions by a gate oxide layer and a gate electrode. CONSTITUTION:An SiO2 layer 2 is formed onto a substrate 1, an silicon layer shaped onto the layer 2 is patterned insularly, and a low-concentration N type region 4 as a drain region and high-concentration N type regions 3 at the end sections of the region 4 are shaped. SiO2 layers 5 are formed, and the unnecessary sections of the high-concentration N type region 3 and the central section of the low-concentration N type region 4 are removed. An silicon layer is shaped onto the layers 5, and patterned insularly. P type regions 7, a low-concentration N type region 8 and high-concentration N type regions 6 are prepared to the silicon layer. A gate oxide layer 9, source electrodes 10, drain electrodes 11 and a gate electrode 12 are formed onto these regions, thus constituting a high withstanding-voltage N channel MOS transistor. |
