| 发明名称 |
|
| 摘要 |
<p>PURPOSE:To produce a cracking resistant thin film heating resistor for thermal heads by forming a thermally expansible buffer layer between a glaze layer 2 and a heating resistor layer 7. CONSTITUTION:Forming on a glaze layer 2 a high resistivity layer 7a of on not lower than 5000 muOMEGAcm and on it a low resistivity layer 7b of 200 to 500 muOMEGAcm to constitute a Ta-Si alloy heating resistor layer 7 with both layers. Heating the thermal head at 500 to 600 deg.C by increasing the applied voltage on electrodes 4 of thus constituted thermal head results in a reaction between the high resistivity layer 7a and the low resistivity layer 7b to form coarse particles of Ta in the Ta-Si alloy. The particles prevent the forming of cracks and the damaging by an increased electric power. Alloys other than Ta-Si also can be used if the element in the low resistivity layers of the alloy difuses into the high resistivity layer to form coarse crystalls.</p> |
| 申请公布号 |
JPS6118322(B2) |
申请公布日期 |
1986.05.12 |
| 申请号 |
JP19770147448 |
申请日期 |
1977.12.07 |
| 申请人 |
MATSUSHITA ELECTRIC IND CO LTD |
发明人 |
TAGUCHI NOBUYOSHI;MATSUO KOJI;TAKAHASHI HIROSHI;ODA FUJIO |
| 分类号 |
H01C7/00;B41J2/335;H01C7/18 |
主分类号 |
H01C7/00 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
