| 摘要 |
PURPOSE:To enable a sensor, which has high resolution and cost thereof is low, by thermally treating a photoconductive film evaporated or sputtered onto a substrate to form an ohmic electrode film and selectively etching an ohmic electrode and a photoconductive film dot while using a striped resist mask as a window. CONSTITUTION:An image sensor thin-film pattern 4 having high sensitivity is attached onto a substrate 1 in a film shape by mask-evaporating or mask- sputtering CdS, SeS, etc. An evaporated sensor thin-film is thermally treated in an Ar atmosphere at 500-700 deg.C, thus forming a sensor element body having excellent optical responding properties. Resist masks 8 for etching through which fine dots for an image sensor are shaped are applied, ohmic electrode films 6 and 6' are isolated while employing the mask patterns 8 as etching windows, and the photoconductive film 4 is isolated by using the same patterns 8 to form square dots 9. The mask patterns 8 on the substrate 1 isolated through the selective etching of the electrode films and the photoconductive film are removed, thus forming the image sensor. Thereby sensor, which has high resolution and cost thereof is low, is realized. |
