| 摘要 |
PURPOSE:To suppress a contaminated layer forming on a semiconductor substrate and to remove a contaminated layer, by heating the substrate over 250 deg.C in the vacuum chamber in which the substrate was also dry-etched, after the dry-etching. CONSTITUTION:A semiconductor substrate 9 in the etching chamber 2 is appropriately etched by ions 5 and neutral radicals 6 extracted from plasma 4 in the plasma discharging chamber 1. After finishing the etching, both the chambers are evacuated by a exhausting tube to make them high vacuum. At this time, the substrate 9 is heated by a heater or an infrared ray lamp so that the surface of the substrate 9 becomes over 250 deg.C. In this way, gas leaving from the substrate surface becomes more than gas in the etching chamber being absorbed in the substrate surface, so that contamination on the surface can be removed. Moreover, if the substrate heating is continued to the next process, cleaning process can be eliminated, which has been previously done just before the next process. |
