| 摘要 |
PURPOSE:To improve the ratio of signal-to-noise by a method wherein the recoupling speed of a photo excitation carrier is increased by reducing the thickness of an amorphous semiconductor thin film to the range of limits of the depth of a surface depletion layer, and a dark conductivity is made smaller than the reduced photo conductivity. CONSTITUTION:An amorphous semiconductor thin film 4, having the film thickness same as or less than the depth of a surface depletion layer, is formed on an insulative substrate 1, and the film 4 is patternized by performing a photoetching. A metal electrode is formed thereon, and it is divided into an individual electrode 3 and a common electrode 2 by performing a photoetching, and an amorphous semiconductor thin film 5, to be turned to a pectinated light- receiving surface, is exposed. Al, Al-Mg and the like are considered suitable as the material for the metal electrode. The line width of the individual electrode 3 is 80-90mum in the case of 8 line/mm in the main scanning direction. The amorphous semiconductor thin film 5 can be formed using hydrogenated amorphous silicon, hydrogenated amorphous germanium and the like. |
