发明名称 SEMICONDUCTOR DEVICE
摘要 PURPOSE:To prevent step cuts by making the wiring of a contact aperture part gentle by a method wherein the insulation layer of the contact aperture part is constructed of steps with the same material. CONSTITUTION:A diffused layer 6 is formed as e.g. a resistor in a semiconductor layer 10. The contact aperture part to connect the same layer 6 to a wiring 5 is composed of a plurality of insulation layers 7, 8, and 9, thus forming a stepwise structure by enlarging the contact aperture in the order of the first insulation layer 9 to the third insulation layer 7. The insulation layers 7, 8, 9 are made of the same material e.g. Si oxide film. The wiring 5 of the contact aperture part becomes gentle by constructing the insulation layer of the contact aperture part out of stepwise structure. This prevents the generation of step cuts of the wiring 5.
申请公布号 JPS6190460(A) 申请公布日期 1986.05.08
申请号 JP19840212853 申请日期 1984.10.11
申请人 NEC CORP 发明人 HIZAKI HIROSHI
分类号 H01L21/3205;H01L29/41;H01L29/417;(IPC1-7):H01L29/44;H01L21/88 主分类号 H01L21/3205
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