| 摘要 |
PURPOSE:To realize a high gain by inserting a collector-emitter path of the 3rd and 4th transistors (TR) between each emitter of the 1st and 2nd TRs and a constant current source, providing the 5th and 6th TRs, connecting respectively the base and emitter to those of the 3rd and 4th TRs and using the collector as an output terminal. CONSTITUTION:TRs Q3, Q4 in cross connection are inserted between TRs Q1, Q2 and the constant current source IEE and TRs Q5, Q6 connected to the Q3, Q4 are provided. Further, the emitter area of the TRs Q5, Q6 has n-times of that of the TRs Q3, Q4. Since the TRs Q3, Q5 and Q4, Q6 have the same base voltage and the emitter area ratio is 1:n, the collector currents of the Q5, Q6 and nI1', nI2', where I1', I2' are collector currents of the Q3, Q4. Without the Q5, Q6, there are bottle necks in the problem in the relation of DELTAI0 and IEE and the operating voltage loss, and when the Q5, Q6 are provided, these problems are dissolved. |
