发明名称 EXPOSING METHOD BY ELECTRON BEAM
摘要 PURPOSE:To make it possible to execute the compensation of a proximity effect proposed by G. Owen & P. Rismman by means of a raster scan system and to improve an exposure throughput, by changing the dimensions of an address unit on the occasion of the exposure of a pattern region and a non- pattern region. CONSTITUTION:A figure (pattern region) to be formed on a sample 11 is represented as a set of elements 53 of an address unit X an address unit. The exposure of a figure part is executed by a method wherein each of the elements 53 constituting figures 51 and 52 is exposed by means of an electron beam spot 54 having a sectional area which is substantially the same with the area of the element 53. On the occasion when a background part (non-pattern re gion)/56 is exposed, on the other hand, a beam spot 54' having a sectional area by far larger than the beam spot 54 and having a Gaussian distribution is used. In other words, the same figures 51' and 52' are represented by large address units, and each of elements 53' constituting the background part 56' of these figures is exposed by means of the beam spot 54'.
申请公布号 JPS6189630(A) 申请公布日期 1986.05.07
申请号 JP19840211965 申请日期 1984.10.09
申请人 TOSHIBA CORP;TOSHIBA MACH CO LTD 发明人 NAKASUJI MAMORU;KASAHARA IZUMI
分类号 H01L21/027;H01J37/302;H01J37/317;(IPC1-7):H01L21/30 主分类号 H01L21/027
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