| 摘要 |
PURPOSE:To obtain an electrode structure which does not contain Si in aluminum wirings and no punch-through phenomenon of aluminum by reducing silicon content of aluminum wirings, and contacting the aluminum wirings through a polysilicon layer with a conductive type silicon region. CONSTITUTION:The content of silicon of aluminum wirings 6a is less, and if the content of Si with aluminum is, for example, 10<-6> atom density or lower, Si does not segregate at ambient temperature. A polysilicon layer 7 is laid under the wirings 6a at the portions considered for punch-through to the substrate 1 to diffuse the Si in the aluminum thereby preventing the punch-through to the substrate 1 from occurring. Thus, in case that at n<+> type diffused layer 2 is formed on the p type substrate 1, this can be applied to the case that a p type region is formed in the n type substrate and the aluminum wirings electrically contacted with the p type region. |
