| 摘要 |
PURPOSE:To obtain a fine pattern by executing RIE using CF4 system gas to deep ultraviolet ray resist based on chloromethylstyrene (CMS) with a thin film of azide system ultraviolet ray resist used as a mask. CONSTITUTION:Aluminum 1 is coated with chloromethylstyrene CMS resist 2 and is baked and the surface is flattened. The CMS resist is not resistive to dry etching but is highly resistive to etching by C system gas plasma. Next, resist is coated with the azide system ultraviolet ray resist 3 in the thickness of about 1/3 of the thickness of resist 2 and is then exposed and developed. The resist 3 shows large resistivity to dry etching by CF4. Moreover, at the time of exposure, since the base is flat, the light is not reflected and a fine mask pattern of resist 3 can be obtained. With the CF4 gas, the CMS resist is dry-etched by RIE and thereby fine and vertical resist pattern can be obtained. According to this method, a problem of the stepped portion and thickness of resist which are not suitable for fining can be solved and fine pattern of 1mum or less can be formed. |
