| 摘要 |
PURPOSE:To form the body contact resistance of an ohmic electrode, and to eliminate the obstruction of light emission by the electrode by shaping light- emitting sections on the side surface of an element at the rate of at least four positions per 1mm width and forming the electrode to the surface of the element. CONSTITUTION:A p type Ga1-xAlxAs layer 2, an n type Ga1-xAlyAs layer 3 and an n<+> type GaAs layer 4 are shaped onto the surface of a p type GaAs substrate 1 in succession, glass films 5 are formed onto the layer 4, one parts of the films 5 are removed and minus (ohmic) electrodes 6 being in contact with the layer 4 are shaped onto the films 5 in an array shape, and semicircular ohmic contact sections 7 are formed while indentations 6a are shaped to the electrodes 6. A plus (ohmic) electrode is formed onto the whole back of the substrate 1. When voltage is biassed among the minus electrodes 6 and the plus electrode 8 in the forward direction, currents concentrate to the ohmic contact sections 7 and flow, and beams are projected to the side from light- emitting sections 9 on the side surface of an element. The ohmic contact sections 7 are shaped at four positions or more per 1mm width of the element as a LED array, etc. for a printer. |
