| 摘要 |
<p>PURPOSE:To obviate the generation of clouding even if throughput is high by forming successively insulator layers and semiconductor layers under the same conditions for production on not only the front but also rear of a glass substrate then etching the semiconductor layer on the front. CONSTITUTION:A silicon nitride film is formed to 2,500Angstrom as a gate insulating layer 4 on the surface of the glass substrate 1 and an amorphous silicon film is formed to 3,000Angstrom thickness thereon as a semiconductor layer 5. The amorphous silicon is etched to a prescribed pattern by a plasma CVD method and at the same time the semiconductor layer 2' on the rear of the substrate 1 is removed by etching. A mixed soln, composed of hydrofluoric acid:nitric acid: glacial acetic acid = 1:5:15 is used for the etching soln. of the amorphous silicon. The glass substrate is etched and the rear of the substrate is clouded in the conventional process for production using the above-mentioned soln. mixture but the glass substrate is not etched at all and the rear of the substrate is not clouded when the amorphous silicon film is preliminarily formed on the rear of the glass substrate and is simultaneously etched away as in this embodiment.</p> |
