| 摘要 |
PURPOSE:To obtain a homogeneous deposited film by individually introducing active seeds generated by decomposition of compound including C and halogen and film forming material gas, and causing film forming material gas to be energized and react with thermal energy. CONSTITUTION:A gas such as CF4, CHF3, etc. or a compound 115 which assures easy gasification is heated 113 to generate active seeds such as CF2. The active seeds thus generated are introduced 116 to a film forming chamber and a kind or two or more kinds of film forming materials such as SiH4, SiHF3, etc. are individually introduced 116 thereto. An introducing flow rate ratio of raw mate rial gas and active seeds is set to 8/2-4/6 and it is selected in accordance with the deposition condition and kind of active seeds. Heat energy is applied to the film forming raw material gas with a heater 117 in order to excite and react it with active seeds. Thereby, a-Si film is deposited on a substrate 103. Impurity element of gas condition or a compound including such element can be doped to a deposited film under the normal temperature and pressure condi tion. This method realizes a homogeneous deposited film with good reproduci bility. |
