SEMICONDUCTOR STRUCTURE PRODUCTION PROCESS

摘要

FIELD: microelectronics; manufacture of digital semiconductor devices and integrated circuits. SUBSTANCE: structures are periodically irradiated on non-working side with alpha-particle flux from radioisotope radiation source at mHz-band frequency and equal radiation/nonradiation half-cycles; one of physical parameters responding to presence of crystallographic flaws is recorded on working side before and after irradiation; radiation/nonradiation cycles are repeated until recorded parameter is stabilized; upon irradiation, structures are held under normal conditions until relaxation processes fully cease. EFFECT: improved yield of semiconductor structures due to reduced dispersion of their parameters depending on amount of flaws in structure materials.