| 摘要 |
<p>An integrated semiconductor device comprises a semiconductor body (20) with a first surface (36) having a predetermined orientation with respect to a crystalline structure in the semiconductor body. The semiconductor body has a depression (30) formed into the first surface of the body. A layer (29) of thin film material covers at least a portion of the first surface and a slotted diaphragm (32) substantially covers the depression. The slotted diaphragm comprises a slot (82) sized and oriented so that, in the fabrication of the device, an anisotropic etch placed on the slot will undercut the diaphragm and form the depression. A static electric, thermal-to-electric, or electric-to-thermal transducing element (22, 24, 26) is substantially supported by the diaphragm (32) and, therefore, is substantially thermally and physically isolated from the semiconductor body (20).</p> |
