| 摘要 |
PURPOSE:To prevent an uneven density image on an image due to the light interference without adversely affecting electrophotographic characteristics by forming an amorphous photoconductor layer made of Si as a base material, and continuously reducing refractive index of the layer from the side of a conductive substrate toward the interface of the layer. CONSTITUTION:A photoconductive layer 202 is formed on the conductive substrate 201 by a sputtering method or the like in an atm. of introduced SiH4 or the like together with gaseous H2, and the side of the conductive substrate 201 contains Si as a base material and 5atom% H, and the content of H is gradually increased toward a surface layer 203, and the interface with the surface layer 203 contains about 50atom% H. The refractive index of the layer 202 is continuously lowered from the side of the substrate 201 toward the interface with the surface layer 203 which is formed on the layer 202 and contg. Si as a base material and >=1 kind among C, N, and O, thus permitting density unevenness to be prevented on the image due to the interference between the incident light and the light reflected from the interface between the layers 202 and 203. |
