| 摘要 |
<p>In a semiconductor photoelectric conversion device in which a first light-transparent conductive layer serving as an electrode is formed on a light transparent substrate, a non-single-crystal semiconductor laminate member having formed therein at least one PIN junction is formed on the first conductive layer and a second conductive layer serving as another electrode is formed on the semiconductor laminate member, the non-single-crystal semiconductor layer on the side of the first conductive layer is made of SixC1-x(0<x<1), and the boundary between the first conductive layer and semiconductor laminate member is formed by a first uneven surface including a number of convexities. Further, the second conductive layer is reflective, and the boundary between the semiconductor laminate member and the second conductive layer is formed by a second uneven surface.</p> |
