| 摘要 |
PURPOSE:To form a fine pattern on a semiconductor with remarkable step difference part by a method wherein three phase photoresist comprising the first photoresist sensitive to far ultraviolet rays, the second photoresist insensitive to far ultraviolet rays and the third photoresist sensitive to far ultraviolet rays is utilized. CONSTITUTION:A semiconductor substrate 1 with step difference part is coated with the first photoresist 2 sensitive to far ultraviolet rays to flatten the surface thereof selecting the viscosity and coating frequency. After baking process, the photoresist 2 iscoated with the second photoresist 3 insensitive to far ultraviolet rays. After another baking process, the photoresist 3 is further coated with the third photoresist 12 sensitive to far ultraviolet rays. Then the third photorest 12 is exposed meeting the requirement for pattern forming process utilizing a photoresist mask 4 to form the first pattern. Next after exposing overall surface to normal ultraviolet rays, the photoresist 3 is developed to form the second pattern utilizing the first pattern as a mask. Finally after exposing overall surface to far ultraviolet rays, the photoresist 2 may be developed to form the final pattern utilizing the second pattern formed on the photoresist 3. |
