| 摘要 |
PURPOSE:To eliminate a residual potential and to enhance an accetance potential by forming a photoconductive material composed of an electrostatic charge injection preventing layer made of an amorphous silicon (a-Si) and contg. the specified amt. of impurity and a photoconductive layer made of a-Si and contg. the specified amt. of impurity. CONSTITUTION:A conductive substrate 5 is fixed to a vacuum reactor 2, it is evacuated to 10<-3>-10<-4> Torr, and the conductive substrate 5 is kept at 100-400 deg.C. Gaseous Si2H6 or SiF4 or the like is introduced, and the reactor is kept at the stationary state of 0.1-1 Torr by controlling an evacuation speed. High frequency power is applied between electrodes 3, 4 to form a film. The obtained photoconductive material 12 is composed of the charge injection preventing layer 13 made of a-Si deposited on the conductive substrate 5 and the photoconductive layer 14 deposited on the layer 13, and where the amt. of impurity in the layer 13 is N, and that in the layer 14 is M, the following inequality needs to be satisfied: (N-M)/N <=0.5. |
