COATING OF III-V AND II-VI COMPOUND SEMICONDUCTORS
摘要
<p>A method of fabricating III-V and II-VI compound semiconductors comprising depositing a silicon coating (11) on the semiconductor substrate (10), which coating serves as a diffusion mask and/or a passivation layer. The coating is deposited by avoiding damage to the semiconductor surface.</p>
申请公布号
WO8602488(A1)
申请公布日期
1986.04.24
申请号
WO1985US01930
申请日期
1985.10.03
申请人
AMERICAN TELEPHONE &, TELEGRAPH COMPANY
发明人
CAMLIBEL, IRFAN;CHIN, ALAND, KWANG-YU;SINGH, SHOBHA;VAN UITERT, LEGRAND, GERARD;ZYDZIK, GEORGE, JOHN
