| 摘要 |
PURPOSE:To enable to a decrease current to flow on the internal diodes, which are parasitic on a power MOSFET, and to improve the breaking withstand quantity of the MOSFET by a method wherein the comparatively larger diodes are formed in parts of the surface of the substrate, where are located just under the bonding pads for the source and the gate. CONSTITUTION:Each p type layer and the n<+> type layers formed in the p type layer are used as one cell 7 and the MOS cell part with the plural cells 7 arrayed longitudinally ad laterally is formed. Each aluminum source electrode 8 is connected to the contact part of each cell 7 and a part of the aluminum source electrodes 8 is used as a bonding pad 8A for the source. A part of aluminum gate electrodes 9 is used as a bonding pad 9A for the gate. The p-n junction between p type layers 10 formed in the surface of the substrate 1, where are located just under the bonding pads 8A and 9A, and n<+> type layers 11 formed in parts of the surface of the substrate are constituted as flywheeled diodes FRD1. These FRD1s are designed in such a way as to have a speed on the same level as that of each cell's own FRD2 and the withstand voltage thereof has a withstand voltage equal to that of each cell or a withstand voltage higher than that utilizing the pinch-off between the cells. |
