| 摘要 |
PURPOSE:To obtain the titled resist having a good sensitivity against a high energy radiation such as a X ray and an electron ray etc. and to make useful for a semiconductive element and an electron ray circuit. CONSTITUTION:The tiled resist contains a siloxane resin shown by the formula [wherein the siloxane in the polymer unit has the following formula i.e. (a+b+c)=1.95-2.05, (a)/(a+b+c)=0.4-0.9, (b)/(a+b+c)=0-0.1, (c)/(a+b+c)=0.1-0.6), a mean mol.wt. 150,000-1,000,000, a mol.wt. distribution is <=2.5 specific disper sion Mw/Mn]. The siloxane resin is prepared by reacting [(CH3)3SiO]4, [(CH2= CH)CH3SiO]4, [(C6H5)2SiO]4 and [(CH33SiO]4 in a prescribed ratio. As the above described resin is used to the titled resist, said resin has the high sensitiv ity and a high resolving accuracy against the high energy ray and is usable to the circuit. |
