| 摘要 |
PURPOSE:To obtain SOI by covering a part of Si thin film surface with a film which is more easily evaporated than Si and single crystallizing it around the exposed region of Si through the heating within a short period of time. CONSTITUTION:A poly-Si or amorphous Si thin film 6, SiO2 thin film 7 (more difficult to evaporate than Si) are stacked on a quartz substrate 5. It is then irradiated with the laser beam, the Si 6 is melted and heating is suspended. Heat of film 6 does not escape to the substrate 5, convection is not generated at the surface of substrate due to the heating within a short period of time, Si is partly vaporated at the surface of an aperture 10 getting vaporization heat, it is cooled more effectively and quicker than the circumference. Thereby, Si single crystal region is obtained around the aperture 10. In the case of heating by laser beam, use of SiO2 film in the thickness of about 850Angstrom is effective. According to this structure, the SOI single crystal can be formed at the desired region regardless of the underlayer structure. |
