| 摘要 |
PURPOSE:To protect a simultaneously formed thin-film transistor from static electricity by shaping a thin-film two terminal element in approximately the same structure as the thin-film transistor, short-circuiting a gate electrode and a second main electrode and short-circuiting a light -shielding film for the transistor and the second electrode. CONSTITUTION:An Al gate electrode 2, an SiOx film 3 and an alpha-Si:H thin -film 4 are formed onto a glass plate 1, and first and second main electrodes 5, 6 consisting of Al are arranged at both ends. The electrode 5 is in contact with the thin-film 4 through an opening in an SiOx film 7 functioning as a field insulating film in combination, extends on the thin-film 4 through the film 7 and is superposed on the electrode 6 in a plane manner. A wiring 16 is shaped at the same time as the electrode 5 as required. The electrode 6 is short-circuited to the gate electrode through an opening in the gate insulating film 3. The two terminal element can be shaped at the same time as a thin-film transistor having reverse stagger, and has characteristics in which it is conducted suddenly at some voltage in both directions, thus optimizing a protection from static electricity of a thin-film transistor loading device, then controlling Vth by channel length and width, the thickness and kinds of the insulating film 7, the offset quantities of the electrodes 5 and 2, etc. |
