| 摘要 |
PURPOSE:To obtain visible-light semiconductor light-emitting element having excellent performance and reliability by forming a first conduction type third GaAs layer onto the surface of a first GaAs layer not coated with a second GaAs layer shaped onto the surface except one part in the surface of the first conduction type first GaAs layer and the second GaAs layer in double hetero- structure. CONSTITUTION:An n-GaAs buffer layer 42, an n-(Al0.3Ga0.7))0.5In0.5P clad layer 43, an un-doped Ga0.5In0.5P active layer 44, a p-(Al0.3Ga0.7)0.5In0.5P clad layer 45, a p-GaAs layer 46 and an n-GaAs layer 47 are grown on an n-GaAs substrate 41. The n-GaAs layer 47 is etched selectively by using a photo-resist 52 to form a striped opening 51. A p-GaAs layer 48 is grown. AsH3 may be flowed ona MOVPE method in order to protect the substrate at that time. A compound containing Al is not exposed to the surface at that time. Accordingly, a p-GaAs film obtained in this manner is extremely excellent, and a superior electrode is shaped because of an excellent crystal, thus improving the element characteristics and reliability. |
