| 摘要 |
PURPOSE:To form Ga1-xAlxAs (0<x<1) having a specific resistance of 10-10<7>OMEGA.cm with good reproducibility and form an insulation film of a high resistance in the order of 10<7> in maximum by mixing O2, water and CO2 into reaction gas and controlling amount of mixed O2, water and CO2. CONSTITUTION:A garaphite receptor 2 is provided within a glass reaction pipe 1, GaAs substrate 3 which is a semiconductor substrate is placed on the receptor 2, and the substrate 3 is heated up to the predetermined temperature and held thereto by heating the receptor 2 with a resistance heating coil 4. The oxygen gas O2, water, carbonic acid gas CO2 are mixed into the reaction pipe 1, in addition to the reaction gases of trymethylgallium Ga(CH3)3(TMG), trimethyl aluminium Al(CH3)delta3CHI(TMA), arsine AsH, hydrogen gas through the supply pipe 5 in order to cause the crystal for insulation film of Ga1-xAlxAs to grown on the GAAs substrate 3. As explained above, Ga1-xAlxAs can be adjusted with good reproducibility with the specific resistance in the order of 10-10<7>OMEGA.cm by controlling amount of O2, water and CO2 to be mixed. |
