| 摘要 |
PURPOSE:To realize a flattering of the surface of the title transistor, which is essential to integration, by a method wherein an emitter region, which forms a heterojunction with the base, is provided in a part of the interior of the base region. CONSTITUTION:A GaAs layer 22 is made to grow on a high-concentration N<+> type GaAs substrate 21, and then successively, a P-type GaAs layer 23 is made to grow thereon. After this, a part of the layer 23, where is to be used as the emitter region, is removed. Then, an N-type GaXAl1-XAs region 24 is made to selectively grow at this removed part. Lastly, an emitter electrode 26 and base electrodes 27 are formed. As a result, by burying the emitter, which forms a heterojunction with the base, in the base region, the flattening of the surface of the heterojunction bipolar transistor is realized and a wiring on the surface is simplified. |
