| 摘要 |
PURPOSE:To enable epitaxial growth of a semiconductor such as silicon which has excellent electrical characteristic and crystallizability, by a method wherein inert helium gas is employed as a carrier gas in place of hydrogen gas in the early stage of epitaxial growth. CONSTITUTION:Sapphire substrates 2 for epitaxial growth of a semiconductor such as silicon are mounted on a heating plate 3 and placed in a bell jar 1. A helium has valve 6 is first opened. In consequence, a material gas mixture of helium has contained in a helium container 7 and monosilane gas contained in a monosilane gas container 8 is supplied through a material gas inlet 5 to the sapphire substrates 2 heated by an induction heating coil 4. When a silicon film 9a of 100-500Angstrom thickness has been epitaxially grown on the surface of each sapphire substrate 2 as a result of the supply of the material gas mixture containing helium gas, the helium gas valve 6 is closed, and a hydrogen gas valve 10 is opened to supply a material gas mixture of hydrogen gas and the monosilane gas to the sapphire substrates 2 from the gas inlet 5. |
