| 摘要 |
PURPOSE:To erase the effect of a parasitic bipolar transistor, and to obtain a vertical type MOSFET difficult to be broken down by joining a section be tween a source and a back gate in a Schottky junction. CONSTITUTION:Source-Schottky electrodes 24 form Schottky junctions with back gate regions 25. source regions are replaced with the Schottky electrodes 24, thus erasing the presence of a parasitic bipolar transistor, then solving the problem of breakdown by breakdown currents. Accordingly, there is no parasitic bipolar transistor even when breakdown currents are flowed, thus resulting in the difficulty of the generation of the breakdown of an element. |
