发明名称 |
Method for preparing semiconductor structures and devices which utilize trenches filled with polymeric dieletric materials. |
摘要 |
<p>A method of fabrication of semiconductor structures which utilize trenches filled with polymeric dielectric materials to isolate segments thereof is disclosed. Contamination of the polymeric dielectric during processing of structural segments is avoided by filling the trenches with disposable polymer through formation of conductive patterns upon the structure, with subsequent removal of the disposable polymer and replacement with the desired polymeric dielectric.</p> |
申请公布号 |
EP0176977(A2) |
申请公布日期 |
1986.04.09 |
申请号 |
EP19850112278 |
申请日期 |
1985.09.27 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
ARAPS, CONSTANCE JOAN;KANDETZKE, STEVEN M.;KUTNER, ELLEN LOIS;TAKACS, MARK ANTHONY |
分类号 |
H01L21/762;H01L21/76;H01L21/302;H01L21/3065;H01L21/312 |
主分类号 |
H01L21/762 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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