发明名称 CMOS substrate bias generator having only P channel transistors in the charge pump
摘要 A CMOS substrate bias generator including a PMOS charge pump and a regulator for controlling the operation of the substrate bias generator. The substrate bias generator further includes an input circuit, a reference circuit to provide a reference voltage, a comparison circuit to compare voltage levels between the input and the reference circuit, and output circuitry to provide a signal from the comparison circuitry to the substrate bias generator. The comparison circuitry further includes hysteresis circuitry tending to preserve voltage at a node in the comparison circuit despite an imbalance between the input circuit and the reference circuit.
申请公布号 US4581546(A) 申请公布日期 1986.04.08
申请号 US19830547971 申请日期 1983.11.02
申请人 INMOS CORPORATION 发明人 ALLAN, JAMES D.
分类号 H01L27/04;G05F3/20;G11C11/407;H01L21/822;H03K19/096;(IPC1-7):H03K3/354;G05F1/56 主分类号 H01L27/04
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