| 摘要 |
PURPOSE:To reduce the area occupied by a resistance region without deteriorating the characteristics of a semiconductor device, by simultaneously forming an impurity-diffused layer and the source and drain of a CMOS, which are of the same conductivity type, and employing the impurity-diffused layer as a resistance element of a bipolar circuit part. CONSTITUTION:A semiconductor device consists of a bipolar circuit part X and a CMOS part Y. The bipolar circuit part X is composed of an NPN transistor A and a resistance element B. The transistor A is formed from N type impurity layers 16a, 16b and a P type impurity layer 15. The resistance element B is formed from a P type impurity layer 17 which is formed simultaneously with P type impurity layers 17b, 17c which serve as the source and drain of a P-channel MOS. The resistance element B which is formed simultaneously with the P-channel source and drain has a relatively shallow diffusion depth and less lateral spreading of diffusion. |
