| 摘要 |
PURPOSE:To prevent a silicon film formed on an oxide silicon film from seperating by energy-illuminating through forming the first non-singlecrystal film on an insulating material, forming an isolating layer on it and forming the second non-singlecrystal film on a singlecrystal substrate and the insulating material. CONSTITUTION:When a non-singlecrystal film 17 is formed on a sample having an insulating material 12 in a part on a singlecrystal substrate 11 and the non-singlecrystal film 17 is singlecrystallized with the lateral seeding method, an energy line is illuminated on the first and the second polysilicon films 13 and 17 after the first non- singlecrystal film 13 is formed on the insulating material 12, an isolating layer 14 is formed on it and the second non-singlecrystal film 17 is formed on the singlecrystal substrate 11 and the insulating material 12. For instance, after an oxide silicon insulating film is formed at the predetermined portion on the surface of the singlecrystal silicon substrate 11, the first polysilicon 13 is formed on the surface. After the oxide silicon layer 15 is formed through the oxidation of this polysilicon 13 and the isolating layer 14 is formed through the formation of a nitriding silicon layer 16 on it, the second polysilicon film 17 is coated all over the substrate. After that, it is heated by a laser beam 19. |
