| 摘要 |
PURPOSE:To obtain flattened interlayer insulation films by a method wherein one main surface of the titled device with unevenness in spin-coated with a coating agent of low viscosity and heat-treated at a temperature below 500 deg.C in a nitrogen gas atmosphere, further spin-coated with a coating agent of high viscosity and heat-treated. CONSTITUTION:One main surface of this device which unevenness is spin-coated with the coating agent of low viscosity produced by diluting an organic silicon solution with an alcoholic solvent. An Si oxide film 110 of the first layer is formed by heat-treating this device at a temperature below 500 deg.C in an N2 gas atmosphere. An Si oxide film 111 of the second layer is formed by heat treatment after a spin-coat of high-viscosity coating agent with a spin-coater in the N2 gas atmosphere. This manner enables the formation of the flattened interlayer insulation film excellent in flattening at a temperature below 500 deg.C without cracks. |
