| 摘要 |
PURPOSE:To simply measure the degree of accuracy of a main pattern and an exposing device by a method wherein a pair of auxiliary patterns are drawn front and after main pattern on the same region and positional relations of the auxiliary patterns are detected. CONSTITUTION:A glass substrate 21, on which a Cr film and an electron beam resist film were successively formed, is fixed on a driving stage of an electron beam exposing device. The auxiliary patterns 41 are drawn on regions 32-35, where auxiliary patterns are expected to be formed, located at the four corners of the substrate 21. Then, prescribed main patterns which are actually required are drawn on an expected main pattern forming region 31. After drawing, a pattern 41 and a mating auxiliary pattern are superposed on regions 32-35 successively. Then, developing and etching processes are performed and patterns are formed. The patterns 41, 43 and 42, 44 are established in advance in such way that (a) and (b) alone are deviated and by detecting this deviation of position, the measurement of accuracy of the main pattern can be performed. |
