发明名称 |
METHOD OF METALLIZING SINTERED CERAMICS MATERIALS |
摘要 |
<p>A method of metallizing ceramics in which, on a desired surface of a ceramic containing a silicon compound, a manganese-containing metal layer substantially free from any minute gaps with respect to the surface of the ceramics is formed, whereupon the resultant structure is heated to a temperature lower than the melting point of manganese to cause the reaction between manganese atoms and the silicon compound. As a method for forming the metal layer, there is a method wherein a deposited film is formed by vacuum-evaporating or sputtering manganese metal or a manganese alloy or a method wherein a melt of a manganese-copper, manganese-nickel or manganese-titanium alloy is formed on the surface of the ceramic under the application of a pressure. The metallizing method can be conducted at a lower temperature and in a shorter period of time compared with a conventional metallizing method.</p> |
申请公布号 |
DE3269356(D1) |
申请公布日期 |
1986.04.03 |
申请号 |
DE19823269356 |
申请日期 |
1982.06.23 |
申请人 |
HITACHI, LTD. |
发明人 |
MIYAZAKI, KUNIO;OOKOSHI, YUKIO;KUMAGAI, AKIRA;SUZUKI, HITOSHI |
分类号 |
C04B37/02;B32B15/04;B32B18/00;C04B41/51;C04B41/88;(IPC1-7):C04B41/88 |
主分类号 |
C04B37/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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