| 发明名称 |
Integrated circuit fabrication process and device. |
| 摘要 |
<p>Integrated circuits wherein the width of contacts 12 is narrowed by a sidewall oxide 24', so that the metal layer 10 can be patterned to minimum geometry everywhere, and does not have to be widened where it runs over a contact.</p> |
| 申请公布号 |
EP0176010(A2) |
申请公布日期 |
1986.04.02 |
| 申请号 |
EP19850111545 |
申请日期 |
1985.09.12 |
| 申请人 |
TEXAS INSTRUMENTS INCORPORATED |
发明人 |
TENG, CLARENCE;HAKEN, ROGER A. |
| 分类号 |
H01L23/522;H01L21/768;(IPC1-7):H01L21/60;H01L21/90 |
主分类号 |
H01L23/522 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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