| 摘要 |
PURPOSE:To bring wiring channel into specified ohmic contact regardless of a slight slip of opening positions by a method wherein, when source and drain regions are diffusion formed on the surface layer of a semiconductor substrate to be coated with an insulating layer further making openings to form wiring channels connecting to these regions, the wiring channels are made of the semiconductor with the same conductive type as that of said regions. CONSTITUTION:A P type source region 2 and a P type drain region 3 are diffusion-formed at specified interval on the surface layer of an N type Si substrate 1 to be coated with an insulating layer 4 thin on both regions 2, 3 and the part between them while thick at both ends. Next a gate electrode 8 is provided between said regions 2, 3 while openings are made at outer sides of regions 2, 3 to connect wiring channels with each other but accurate positions are not necessarily required of these openings. Later, the wiring channels 7, 9 made of P type Si respectively connected to regions 2, 3 are provided from the opening up to the layer 4 to bring them into excellent ohmic contact through the intermediary of the resultant P type regions 15, 16. |
