Method of producing a complementary semiconductor device with a dielectric isolation structure

摘要

A method of producing a complementary semiconductor device having p-type islands and n-type islands in a dielectric isolation structure, including removing a projecting portion of a polycrystalline silicon layer, which is formed at the same time as the formation of an epitaxial silicon layer for one of two types of islands, so as to obtain an almost smooth exposed surface. The smooth surface contributes to the formation of a good masking pattern on the epitaxial silicon layer by a photoetching method, so that mesa portions for islands having exact dimensions are formed at predetermined positions.