发明名称 |
Implant mask reversal process |
摘要 |
A reverse mask is formed after the first ion implantation step by applying a second masking material to at least fill the opening in the first mask layer and removing the second mask material to reveal at least a portion of the first mask layer. The first mask layer is then selectively removed with any superimposed second mask layer material thereon. This forms a truly inverse mask. Second conductivity impurities are then introduced through the inverse mask to form self-aligned complementary wells in a substrate.
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申请公布号 |
US4578859(A) |
申请公布日期 |
1986.04.01 |
申请号 |
US19840643362 |
申请日期 |
1984.08.22 |
申请人 |
HARRIS CORPORATION |
发明人 |
HAUSE, FREDERICK N.;GASNER, JOHN T. |
分类号 |
H01L21/28;H01L21/8238;H01L27/092;(IPC1-7):H01L21/22;H01L29/78;H01L21/265 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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