| 发明名称 |
Method of making zero temperature coefficient of resistance resistors |
| 摘要 |
Polysilicon resistors and integrated circuits are brought to zero or positive temperature coefficient (TCR) by a combination of laser annealing and ionic hydrogen plasma treatment.
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| 申请公布号 |
US4579600(A) |
申请公布日期 |
1986.04.01 |
| 申请号 |
US19830505523 |
申请日期 |
1983.06.17 |
| 申请人 |
TEXAS INSTRUMENTS INCORPORATED |
发明人 |
SHAH, RAJIV;HUGHEY, SAMUEL L. |
| 分类号 |
H01L27/04;H01L21/02;H01L21/20;H01L21/268;H01L21/30;H01L21/324;H01L21/822;H01L27/11;(IPC1-7):H01L21/425 |
主分类号 |
H01L27/04 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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