| 摘要 |
PURPOSE:To form the mushroom-shape electrode by forming an electrode composing material layer by forming a mask layer in which the window of the predetermined size having a rounded edge is opened on a substrate and further removing the mask layer after etching the electrode composing material layer by patterning to cover the window. CONSTITUTION:A resist film 6 is formed on a semiconductor substrate 1 and a window 7 of width L is formed by photolithography. Nextly annealing is done in an oxygen plasma atmosphere so as to round a peripheral edge 8 of the window 7 of the resist film 6. Then a metallic layer 9 is formed on the resist film 6 including the inside of window 7. Subsequently, a resist film 10 of the predetermined pattern is formed on the metallic layer 9 and the metallic layer 9 is etched by using the resist film 10 as a mask to form a metallic electrode 9a which is completed by removing the resist films 6 and 10 after that. Thus the mashroom-shape electrode can be formed. |
