NEGATIVE TYPE RESIST COMPOSITION AND FORMATION OF FINE RESIST PATTERN USING SAID COMPOSITION

摘要

PURPOSE:To form a fine pattern having good dry etching resistance with high sensitivity by irradiating collectively UV rays of a specific wavelength on a specific resist material formed on a substrate then irradiating short-wavelength UV rays thereon into the pattern. CONSTITUTION:The naphthoquinone diazide sulfonate of a copolymer of vinyl phenol and methyl methacrylate is used as the negative type resist material. The film of such resist material is formed on the substrate and after 350-450nm UV rays are collectively irradiated onto the film, and 200-300nm short- wavelength UV rays are irradiated thereon into the pattern. Since such resist material contains a phenyl group or naphthyl group, the dry etching resistance can be improved. The resolving power is improved by the collective irradiation of the UV rays. The resist pattern is easily made rectangular by the lithography of the UV rays of the short wavelength. The fine pattern having the good dry etching resistance is thus formed with high sensitivity and such pattern is used for the production of a highly integrated semiconductor device.