PROCEDE POUR LA FABRICATION DE DISPOSITIFS SEMICONDUCTEURS

摘要

1332277 Semi-conductor devices RCA CORPORATION 15 June 1972 [23 June 1971] 28159/72 Heading H1K In the manufacture of a semi-conductor device a patterned layer of polycrystalline ptype Si is provided on an insulator 16 by diffusing a p-type dopant into portions 28 of a continuous, preferably intrinsic, polycrystalline Si layer 20 on the insulator 16, and then removing the undoped portions of the layer 20, preferably using an etchant which selectively attacks Si rather than p-type Si. Suitable etchants are disclosed. The insulator 16 may be a layer of SiO 2 on a monocrystalline Si substrate 12, in which case the polycrystalline Si pattern may constitute the gate of an MOS device or an interconnection structure for an integrated circuit. Boron is the preferred dopant for the portions 28, being diffused therein from a borosilicate glass layer 26 through a window in a SiO 2 masking layer 22.