| 摘要 |
PURPOSE:To realize ultra-miniaturization by insulating and separating memory cell with an insulation film formed by chemical vapor growth method and insulating and separating the portions other than the memory cell with a silicon oxide film. CONSTITUTION:A field insulation film 2, an impurity region 3 as channel stopper, a boron-doped region 4 and a thermal oxide film 5 are formed on a P type semiconductor substrate and BPSG is caused to grow thereon by the CVD technique. BPSG is eliminated and a field part 6 is formed. Next, an N type impurity region 8 and electrode 9 are formed. Thereafter, a gate electrode 11 and a transfer gate electrode 12 are formed by the heat oxidization through a gate insulation film 10. Next, an interlayer insulation film 13 and an aluminum wiring layer 15 are formed. |
