| 摘要 |
PURPOSE:To perform the microminiaturization of an element by microminiaturizing the structure of the element of a semiconductor device having ultrahigh frequency characteristic, forming an electrode line as gate and drain electrodes, and alloying a source electrode from the downside of a substrate as an earth line. CONSTITUTION:A non-doped AlGaAs layer 12, a GaAs layer 13, an N type AlGaAs layer 14 and an N type GaAs layer 15 are formed on a semi-insulating semiconductor substrate 11. Then, a photoresist layer 16 is coated, patterned, and then a source electrode 17, a drain electrode 18 and a gate electrode 19 are formed thereon. The portion of the source electrode of the substrate is etched from the back surface to the non-doped GaAs layer 13 to form a recess 20. Then, after an ohmic electrode 21 is formed over the entire back surface of the substrate, a gold 22 is further plated thereon. Thus, the conductive portion of the layer 21 and the gold 23 and the electrode 17 are conducted to lead the source electrode from the lower surface of the substrate 11. |
