| 摘要 |
PURPOSE:To reduce generation of slip line during high temperature heat processing by surrounding a silicon wafer with a film consisting of a material having smaller thermal conductivity than that of silicon. CONSTITUTION:After forming orientation flat line OF to a single crystal silicon ingot 10, a polycrystalline silicon film 11a, a silicon nitride film 11b, a polycrystalline silicon film 11c are sequentially deposited by the vapor growth method on the surface of said single crystal silicon ingot in order to form a composite film. Wafers 12 are formed by slicing them from the ingot 10. In the case of executing heat processing to such wafer 12, a silicon nitride film 11b having small thermal conductivity is prepared between the quartz basket (not shown) accommodating wafer 12 and the wafer 12. Therefore, the heating cooling rates at the circumference of wafer 6 are equalized without relation to the quartz basket support (not shown) and generation of slip line is reduced. |
