| 摘要 |
PURPOSE:To detect the end point of etching of a polyimide resin etched by utilizing gas plasma with excellent reproducibility by monitoring the secular change of the intensity of light emission of a reaction product on etching. CONSTITUTION:A wafer 30 is placed onto an electrode 12, a treating chamber 10 is decompressed and evacuated to fixed pressure, and an etching gas is introduced while the gas is adjusted at predetermined etching pressure. Glow discharge is generated between electrodes 11, 12 by applying high-frequency power to the electrode 12, and the etching gas is changed into plasma and the wafer 30 is etched, thus forming a reaction product. Only beams having a specific wavelength in light emission from the reaction product are selected by a monochrometer 20, converted into an electric signal by a photomultiplier 21, amplified by an amplifier 22 and inputted to a recorder 23. The intensity of light emission largely increases with the starting of etching, and suddenly reduces with the completion of etching, thus detecting the end point of etching of a polyimide resin film 32 on the wafer 30 with excellent reproducibility. |
