| 摘要 |
PURPOSE:To improve the drape of a gate insulation film at the edge of a metallic layer by a method wherein the stepwise differences between the gate and an insulation substrate which is the base by filling the periphery of the gate with an insulation layer. CONSTITUTION:A Cr gate film 2 of approx. 2,000Angstrom thickness is selectively formed on a glass plate 1, and a photo-permeable SiO2 film 13 of the same thickness and a negative photosensitive resin film 14 are put thereon. When the films are developed by irradiation with a large amount of ultraviolet rays 5 from the back of the substrate 1, a resin pattern 14' having an aperture 16 slightly smaller than the Cr film 2 can be obtained. Next, a projection 17 of the SiO2 film on the edge of the gate film 2 is smoothened low by opening the SiO2 film 13 through somewhat long etching. Since this construction enables a gate insulation film 3 to be formed to a flat surface by filling the insulation layer 13 with a gate metal 2, the gate insulation film can be thinned without becoming thinner at the edge of the gate metal 2, and the integration of the device is enabled. |
